POLISHING COMPOSITION TO BE USED TO POLISH SEMICONDUCTOR SUBSTRATE HAVING SILICON THROUGH ELECTRODE STRUCTURE, AND POLISHING METHOD USING POLISHING COMPOSITION

摘要

Provided is a polishing composition used for polishing a semiconductor substrate having a through-silicon via structure, comprising an oxidizing agent having a standard electrode potential of 350 mV or more and 740 mV or less, a silicon polishing accelerating agent, a through-silicon via material polishing speed increasing agent, a silicon contamination preventing agent, and water.