Radiation hardened transistors based on graphene and carbon nanotubes

摘要

A radiation hard substrate comprising a silicon wafer coated with a layer of SiC, CaF2 or fluorinated silicon oxide is provided. A carbon-based material of graphene or carbon nanotubes is formed on the substrate, which serves as the actve material used to fabricate the transistor. Contacts are formed to the portions of the carbon-based material that serve as the source and drain regions of the transistor. A gate dielectric is deposited over the portion of the carbon based material that serves as the channel region of the transistor. A top-gate contact is formed on the gate dielectric.