| 摘要 |
<p>A phase change memory device is provided to maintain thermal cross-talk a free distance in a phase shift process using joule heat caused by current flowing by forming a mask pattern exposing each cylindrical heater and by forming a stack pattern of a phase change layer and an upper electrode on a cylindrical heater including the mask pattern. A semiconductor substrate(200) has a plurality of phase change cell regions. A lower electrode(220) is formed on each phase change cell region of the semiconductor substrate. A first insulation layer is formed on the semiconductor substrate including the lower electrode, including respective holes exposing the respective lower electrodes. A cylindrical heater(240) is formed on the surface of the hole to come in contact with the lower electrode. A second insulation layer is formed to fill the groove having the cylindrical heater. A mask pattern(260) is formed on the first and second insulation layers including the cylindrical heater in a manner that a part of each cylindrical heater is exposed, wherein the exposed portion has a predetermined pitch. A phase change layer is formed on the mask pattern including the exposed part of the cylindrical heater. An upper electrode(280) is formed on the phase change layer. The heater can be one of a TiN layer, a TiW layer or a TiAlN layer. The mask pattern can be a nitride layer.</p> |
