| 摘要 |
Embodiments of the present invention provide an IGBT, which relates to the field of integrated circuit manufacturing, and may improve a problem of tail current when the IGBT is turned off. The IGBT includes a cell region on a front surface, a terminal region surrounding the cell region, an IGBT drift region of a first conductivity type, and an IGBT collector region on a back surface. The IGBT collector region is connected to the IGBT drift region and under the IGBT drift region. The IGBT drift region includes a first drift region under the cell region and a second drift region under the terminal region. The IGBT collector region includes a cell collector region of a heavily doped second conductivity type under the first drift region and a non-conductive isolation region adjacent to the cell collector region. A length of the non-conductive isolation region is smaller than or equal to a length of the terminal region, and a thickness of the non-conductive isolation region is larger than or equal to a thickness of the cell collector region.Turn-off loss of the IGBT may be reduced, and turn-off reliability may be improved. |
