发明名称 |
Semiconductor device |
摘要 |
Disclosed is a semiconductor device including two oxide semiconductor layers, where one of the oxide semiconductor layers has an n-doped region while the other of the oxide semiconductor layers is substantially i-type. The semiconductor device includes the two oxide semiconductor layers sandwiched between a pair of oxide layers which have a common element included in any of the two oxide semiconductor layers. A double-well structure is formed in a region including the two oxide semiconductor layers and the pair of oxide layers, leading to the formation of a channel formation region in the n-doped region. This structure allows the channel formation region to be surrounded by an i-type oxide semiconductor, which contributes to the production of a semiconductor device that is capable of feeding enormous current. |
申请公布号 |
US9373711(B2) |
申请公布日期 |
2016.06.21 |
申请号 |
US201414174438 |
申请日期 |
2014.02.06 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Yamazaki Shunpei;Suzawa Hideomi;Shimomura Akihisa;Tanaka Tetsuhiro;Tezuka Sachiaki |
分类号 |
H01L29/49;H01L29/78;H01L29/26;H01L29/786;H01L29/10 |
主分类号 |
H01L29/49 |
代理机构 |
Robinson Intellectual Property Law Office |
代理人 |
Robinson Intellectual Property Law Office ;Robinson Eric J. |
主权项 |
1. A semiconductor device comprising:
a transistor which includes:
a first oxide layer;a first oxide semiconductor layer over and in contact with the first oxide layer, the first oxide semiconductor layer including a first region containing an impurity;a second oxide semiconductor layer over and in contact with the first region; anda second oxide layer over and in contact with the second oxide semiconductor layer, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer is a crystalline oxide semiconductor layer. |
地址 |
Kanagawa-ken JP |