Solid-state image pickup apparatus, image pickup system including solid-state image pickup apparatus, and method for manufacturing solid-state image pickup apparatus

摘要

A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.

主权项

1. A method for manufacturing a solid-state image pickup apparatus including a photoelectric conversion portion, a first transistor and a second transistor, comprising:
forming a first insulating film on the photoelectric conversion portion, the first transistor, and the second transistor; removing the first insulating film on the second transistor while leaving the first insulating film on the photoelectric conversion portion and the first transistor; forming a protection film on the photoelectric conversion portion, the first transistor, and the second transistor so as to cover the first insulating film; removing the protection film on the second transistor while leaving the protection film on the photoelectric conversion portion and the first transistor; forming a silicide region on the second transistor after the removing the protection film; forming a second insulating film on the photoelectric conversion portion, the first transistor, and the second transistor having the silicide region so as to cover the protection film; removing the second insulating film on the first transistor while leaving the second insulating film on the second transistor; forming a third insulating film on the photoelectric conversion portion, the first transistor, and the second transistor so as to cover the first insulating film and the second insulating film; forming a first contact hole, in the third insulating film, corresponding to a first contact plug configured to electrically connect with the first transistor; and forming a second contact hole, in the third insulating film, corresponding to a second contact plug configured to electrically connect with the second transistor, wherein the first insulating film functions as an etching stop film in the forming the first contact hole and the second insulating film functions as an etching stop film in the forming the second contact hole.