Plasma processing with enhanced charge neutralization and process control

摘要

Plasma processing with enhanced charge neutralization and process control is disclosed. In accordance with one exemplary embodiment, the plasma processing may be achieved as a method of plasma processing a substrate. The method may comprise providing the substrate proximate a plasma source; applying to the plasma source a first RF power level during a first period and a second RF power level during a second period, the first and second RF power levels being greater than zero RF power level, wherein the second RF power level is greater than the first RF power level; generating with the plasma source a first plasma during the first period and a second plasma during the second period; and applying to the substrate a first bias voltage during the first period and a second bias voltage during the second period, wherein the first voltage has more negative potential than the second voltage.

主权项

1. A method of plasma processing a substrate, the method comprising:
providing the substrate proximate a plasma source; applying to the plasma source a first RF power level during a first period and a second RF power level during a second period, the first and second RF power levels being greater than zero RF power level, wherein the second RF power level is greater than the first RF power level; generating with the plasma source a first plasma during the first period and a second plasma during the second period; applying to the substrate a first bias voltage during the first period and a second bias voltage during the second period, wherein the first bias voltage has more negative potential than the second bias voltage; and applying to the plasma source a third RF power level during a third period, wherein the third RF power level is less than the first RF power level; and applying to the substrate the second bias voltage during the third period.