Non-volatile memory device and method for fabricating the same

摘要

A non-volatile memory device includes a channel layer vertically extending from a substrate, a plurality of inter-layer dielectric layers and a plurality of gate electrodes that are alternately stacked along the channel layer, and an air gap interposed between the channel layer and each of the plurality of gate electrodes. The non-volatile memory device may improve erase operation characteristics by suppressing back tunneling of electrons by substituting a charge blocking layer interposed between a gate electrode and a charge storage layer with an air gap, and a method for fabricating the non-volatile memory device.

主权项

1. A non-volatile memory device, comprising:
a channel layer vertically extending from a substrate; a plurality of inter-layer dielectric layers and a plurality of gate electrodes that are alternately stacked along the channel layer; and a memory layer interposed between the channel layer and each gate electrode, wherein the memory layer includes a charge storage laver, a tunnel insulation layer interposed between the charge storage layer and the channel layer, and an air gap interposed between the charge storage layer and each gate electrode.