METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

Provided is a method for manufacturing a semiconductor device capable of improving the feature of the semiconductor device by reducing the resistance of an alternative metal gate electrode. The method for manufacturing the semiconductor device includes the steps of: forming an interlayer dielectric layer including a first trench on a substrate; forming a first conductive layer along the bottom and side of the first trench; forming a first free mask pattern to fill a part of the first trench on the first conductive layer; converting the first free mask pattern to a first mask pattern through a first baking process; and forming a first conductive pattern by removing the first conductive layer exposed by the first mask pattern.