Self-aligned patterning technique for semiconductor device features

摘要

A method for fabricating a semiconductor device utilizing a plurality of masks and spacers. The method includes forming parallel first trenches in a substrate using a first lithographic process. The substrate includes sidewalls adjacent to the parallel first trenches. Forming first spacers adjacent to the sidewalls. Removing the sidewalls, which in part includes using a second lithographic process. Forming second spacers adjacent to the first spacers, resulting in spacer ridges. Etching portions of the substrate between the spacer ridges resulting in second trenches.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming a plurality of parallel first trenches in a substrate using a first lithographic process such that the portions of the substrate adjacent to the parallel first trenches include sidewalls; forming a plurality of first spacers adjacent to the sidewalls of the substrate; forming a plurality of fillers in the parallel first trenches; removing the sidewalls of the substrate, wherein removing the sidewalls includes using a second lithographic process; forming a plurality of second spacers adjacent to the first spacers; removing the fillers; wherein the adjacent first and second spacers in physical contact result in a plurality of spacer ridges.