发明名称 Electro-optical device, method for manufacturing electro-optical device, and electronic device
摘要 An electro-optical device includes: a pixel region that is formed on a substrate and in which a light emitting element that has a first electrode, a second electrode and a light emitting layer formed between the first electrode and the second electrode is arranged; a partition wall portion that is formed above the substrate and located on an outer side of the pixel region; a connecting line that is formed above the substrate and located on an outer side of the partition wall portion; and a connecting section that is formed above the substrate and electrically connects the second electrode to the connecting line, wherein the second electrode covers and extends over the pixel region and the partition wall portion and does not overlap the connecting line in a planar view.
申请公布号 US8928007(B2) 申请公布日期 2015.01.06
申请号 US201113093514 申请日期 2011.04.25
申请人 Seiko Epson Corporation 发明人 Akagawa Suguru;Hanamura Yuki
分类号 H01L27/15;H01L27/32;H01L51/52 主分类号 H01L27/15
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. An electro-optical device comprising: a substrate that has a first region and a second region outside the first region; light emitting element that is formed above the substrate in the first region, the light emitting element having a first electrode, a second electrode, and a light emitting layer formed between the first electrode and the second electrode; a partition wall portion that is formed above the substrate in the second region; a connecting line that is formed above the substrate in an outer side of the partition wall portion; and a connecting section that is formed above the substrate and electrically connects the second electrode to the connecting line, wherein the second electrode covers and extends over a pixel region including a light emitting element, the partition wall portion and the connecting section, the second electrode does not overlap the connecting line in a planar view, and the connecting section is disposed between the second electrode and the partition wall.
地址 Tokyo JP