| 发明名称 | Electrochemically-gated field-effect transistor, methods for its manufacture and use thereof | ||
| 摘要 | An electrochemically-gated field-effect transistor includes a source electrode, a drain electrode, a gate electrode, a transistor channel and an electrolyte. The transistor channel is located between the source electrode and the drain electrode. The electrolyte completely covers the transistor channel and has a one-dimensional nanostructure and a solid polymer-based electrolyte that is employed as the electrolyte. | ||
| 申请公布号 | US8927967(B2) | 申请公布日期 | 2015.01.06 |
| 申请号 | US201313869617 | 申请日期 | 2013.04.24 |
| 申请人 | Karlsruhe Institute of Technology | 发明人 | Dasgupta Subho;Hahn Horst;Nasr Babak |
| 分类号 | H01L29/06;H01L29/08;G01N27/414;H01L51/05 | 主分类号 | H01L29/06 |
| 代理机构 | Venable LLP | 代理人 | Venable LLP ;Kinberg Robert;Howarah George L. |
| 主权项 | 1. Electrochemically-gated field-effect transistor, comprising: a source electrode, a drain electrode, a gate electrode, a transistor channel, which is located between the source electrode and the drain electrode, and an electrolyte, which covers the transistor channel completely, characterized in that the transistor channel comprises a one-dimensional oxide nanostructure and a solid polymer-based electrolyte is employed as the electrolyte. | ||
| 地址 | Karlsruhe DE | ||