Photovoltaic device with an up-converting quantum dot layer and absorber

摘要

A photovoltaic apparatus includes an absorber including a first quantum dot layer having a first plurality of quantum dots of a first quantum dot material in a first matrix material, and an up-converter layer positioned adjacent to the absorber layer, the up-converter layer including a second quantum dot layer having a second plurality of quantum dots of a second quantum dot material and a second matrix material.

主权项

1. A photovoltaic apparatus comprising:
a photovoltaic absorber including a first quantum dot layer having a first plurality of quantum dots of a first quantum dot material in a first matrix material; and an up-converter layer positioned adjacent to the absorber layer, the up-converter layer including a second quantum dot layer having a second plurality of quantum dots of a second quantum dot material and a second matrix material, wherein the first and second matrix materials each comprise a wide bandgap semiconductor material or an insulating material, and wherein the first and second quantum dot layers are lattice matched and wherein the first and second quantum dot materials comprise one or more of: PbS, PbSe, InP, CdSe, CdS, InAs, InSb, and SixGe1-x.