发明名称 Electronic circuit and semiconductor device
摘要 An electronic circuit includes: first circuits each including a first FET having a source supplied with at least one of a first voltage and a second voltage; and a second circuits each of which is associated with a respective one of the first circuits, and generates a back bias voltage applied to the first FET so as to change in accordance with a change of at least one of the first and second voltages.
申请公布号 US8928396(B2) 申请公布日期 2015.01.06
申请号 US201314013578 申请日期 2013.08.29
申请人 Fujitsu Semiconductor Limited 发明人 Nagayama Jun;Awaya Tomoharu
分类号 H03K3/01;G05F1/10;G05F3/02;G05F3/16;H02M1/14;H02M7/48 主分类号 H03K3/01
代理机构 Arent Fox LLP 代理人 Arent Fox LLP
主权项 1. An electronic circuit comprising: a first power supply line; a second power supply line configured to be located along the first power supply line; a plurality of first circuits each including a first FET and configured to be located along the first power supply line and the second power supply line, each of the plurality of first circuits connected to a first power supply node through the first power supply line, and connected to a second power supply node through the second power supply line, a first power supply voltage applied to the first power supply node being changed into changed first power supply voltages based on a distance from the first power supply node to each of the plurality of first circuits, a second power supply voltage applied to the second power supply node being changed into changed second power supply voltages based on a distance from the second power supply node to each of the plurality of first circuits, each of the plurality of first circuits being supplied with a respective one of the changed first power supply voltages and a respective one of the changed second power supply voltages, the first FET of each of the plurality of first circuits having a source supplied with at least one of the respective one of the changed first voltages and the respective one of the changed second power supply voltages; and a plurality of second circuits each being associated with a respective one of the first circuits, located along the first power supply line and the second power supply line, and each configured to generate a back bias voltage applied to the first FET of the respective one of the first circuits, so that the back bias voltage changes in accordance with at least one of the respective one of the changed first power supply voltages and the respective one of the second power supply voltages.
地址 Yokohama JP