发明名称 Encapsulation techniques for leadless semiconductor packages
摘要 An encapsulation technique for leadless semiconductor packages entails: (a) attaching a plurality of dice (411) to die pads in cavities (41-45, 51-55) of a leadframe, the cavities arranged in a matrix of columns and rows; (b) electrically connecting the dice to a plurality of conducting portions (412-414) of the leadframe; and (c) longitudinally injecting molding material into the cavities along the columns via a plurality of longitudinal gates (46-49, 56-59) of the leadframe to package the dice in the cavities, the longitudinal gates situated between the cavities along the columns.
申请公布号 US8928157(B2) 申请公布日期 2015.01.06
申请号 US200912401549 申请日期 2009.03.10
申请人 Vishay-Siliconix 发明人 Kuo Frank
分类号 H01L33/00;H01L23/495;H01L23/28;H01L21/56;H01L23/31 主分类号 H01L33/00
代理机构 代理人
主权项 1. A semiconductor comprising: a leadframe including a plurality of cavities arranged in a matrix and a plurality of gates between the plurality of cavities, wherein a first cavity, a second cavity and a third cavity are situated along a first column of the matrix, and wherein a first gate is separately connected between the first cavity and second cavity, and a second gate is separately connected between the second cavity and third cavity, wherein a fourth cavity, a fifth cavity and a sixth cavity are situated along a second column, and wherein a third gate is separately connected between the fourth cavity and fifth cavity, and a fourth gate is separately connected between the fifth cavity and sixth cavity, and wherein a fifth gate is separately connected between the first cavity and fourth cavity situated along a row of the matrix containing the first cavity and fourth cavity, a plurality of die each disposed in a respective cavity of said plurality of cavities; and a molding material in the first cavity, extending from the first cavity through the first gate into the second gate, extending from the second cavity through the second gate into the third cavity, in the fourth cavity, extending from the fourth cavity through the third gate into the fifth cavity, extending from the fifth cavity through the fourth gate into the sixth cavity, and extending from the first cavity through the fifth gate into the fourth cavity; wherein the semiconductor is formed by; attaching the plurality of dice to die pads in a plurality of cavities of the leadframe, wherein a die is attached in each of the plurality of cavities; electrically connecting each of the plurality of die to a plurality of conducting portions of the leadframe; causing a molding material to flow into the first cavity; causing the molding material to flow from the first cavity into the second one cavity through the first gate of the leadframe; and causing the molding material to flow from the first cavity into the fourth cavity through the fifth gate of the leadframe.
地址 Santa Clara CA US