| 发明名称 | Methods for annealing a contact metal layer to form a metal silicidation layer | ||
| 摘要 | Methods for annealing a contact metal layer for a metal silicidation process are provided in the present invention. In one embodiment, a method for annealing a contact metal layer for a silicidation process in a semiconductor device includes providing a substrate having a contact metal layer disposed thereon in a thermal annealing processing chamber, providing a heat energy to the contact metal layer in the thermal processing chamber, supplying a gas mixture including a nitrogen gas and a hydrogen gas while providing the heat energy to the contact layer in the thermal processing chamber, wherein the nitrogen gas and the hydrogen gas is supplied at a ratio between about 1:10 and about 1:1, and forming a metal silicide layer on the substrate. | ||
| 申请公布号 | US8927423(B2) | 申请公布日期 | 2015.01.06 |
| 申请号 | US201213714588 | 申请日期 | 2012.12.14 |
| 申请人 | Applied Materials, Inc. | 发明人 | Fu Xinyu;Tang Wei;Shah Kavita;Gandikota Srinivas;Yu San H.;Gelatos Avgerinos |
| 分类号 | H01L21/44;H01L29/40 | 主分类号 | H01L21/44 |
| 代理机构 | Patterson & Sheridan, LLP | 代理人 | Patterson & Sheridan, LLP |
| 主权项 | 1. A method for annealing a contact metal layer for a metal silicidation process in a semiconductor device, comprising: providing a heat energy to a substrate having a contact metal exposed on the substrate into a thermal processing chamber; supplying a gas mixture including a nitrogen gas and a hydrogen gas to the exposed contact metal layer while providing the heat energy to the exposed contact metal layer in the thermal processing chamber, wherein the nitrogen gas and the hydrogen gas is supplied at a ratio between about 1:10 and about 1:1; and converting the exposed contact metal layer into a metal silicide layer on the substrate. | ||
| 地址 | Santa Clara CA US | ||