| 主权项 |
1. A method of forming a semiconductor device comprising:
forming a metal interconnect layer including at least two discrete metal conductors; forming a conductive fuse having a first end and a second end connected on said first and second end to said metal conductors; said fuse further comprising: a thin linear fuse portion extending between said first end and said second end, forming an inter-level dielectric layer having a first thickness, said inter-level dielectric layer being positioned adjacent said metal interconnect layer, and said inter-level dielectric layer covering said conductive fuse, said fuse being positioned completely within said inter-level dielectric layer, contacting a lowest portion of said inter-level dielectric layer; and forming a fuse recess partially through said inter-level dielectric layer, said fuse recess being formed adjacent said conductive fuse, a thickness of said inter-level dielectric layer between said conductive fuse and said fuse recess being less than said first thickness, said inter-level dielectric layer comprising a bottom layer and at least one other layer, said fuse further comprising: a U-shaped vertical via on each of said first end and said second end, and said thin linear fuse portion extending between said U-shaped vertical via on said first end and said U-shaped vertical via on said second end, said U-shaped vertical via extending from said end connected to said metal conductor, through said bottom layer and at least partially into said at least one other layer, said linear fuse portion being positioned completely within said bottom layer, and directly contacting a lowest portion of said bottom layer. |
