Semiconductor device

摘要

A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the first conductivity type, a fifth semiconductor region of the first conductivity type provided on the third semiconductor region and the fourth semiconductor region, and a sixth semiconductor region of the second conductivity type. The third semiconductor region is provided on the first semiconductor region and has a dopant concentration that is lower than a dopant concentration of the first semiconductor region. The fourth semiconductor region is provided on the second semiconductor region adjacent to the third semiconductor region. A dopant contained in the fourth semiconductor region extends to a level that is deeper than a level of a dopant contained in the third semiconductor region.

主权项

1. A semiconductor device comprising:
a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type that is adjacent to the first semiconductor region; a third semiconductor region of the first conductivity type that is provided on the first semiconductor region, and has a dopant concentration that is lower than a dopant concentration of the first semiconductor region; a fourth semiconductor region of the first conductivity type that is provided on the second semiconductor region adjacent to the third semiconductor region, and having a dopant that extends to a level that is deeper than a level of a dopant contained in the third semiconductor region; a fifth semiconductor region of the first conductivity type that is provided on the third semiconductor region and the fourth semiconductor region; and a sixth semiconductor region of the second conductivity type that is provided on the fifth semiconductor region.