| 发明名称 | Dual damascene metal gate | ||
| 摘要 | A method for fabricating a dual damascene metal gate includes forming a dummy gate onto a substrate, disposing a protective layer on the substrate and the dummy gate, and growing an expanding layer on sides of the dummy gate. The method further includes removing the protective layer, forming a spacer around the dummy gate, and depositing and planarizing a dielectric layer. The method further includes selectively removing the expanding layer, and removing the dummy gate. | ||
| 申请公布号 | US8927406(B2) | 申请公布日期 | 2015.01.06 |
| 申请号 | US201313738823 | 申请日期 | 2013.01.10 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Wang Chun-Chieh;Hsiao Wen-Chu;Chou Ying-Min;Ko Hsiang-Hsiang |
| 分类号 | H01L21/02;H01L21/3205;H01L21/336;H01L29/76;H01L29/40 | 主分类号 | H01L21/02 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method for fabricating a metal gate, the method comprising: forming a dummy gate onto a substrate; disposing a protective layer on the substrate and on a top surface and a first portion of a sidewall surface of the dummy gate, wherein a second portion of the sidewall surface is free of the protective layer; growing an expanding layer on sides of the dummy gate; removing the protective layer; forming a spacer around the dummy gate and the expanding layer; depositing and planarizing a dielectric layer around the spacer; removing the expanding layer; and removing the dummy gate. | ||
| 地址 | Hsin-Chu TW | ||