| 摘要 |
<p>Provided are a solid-state image pickup device which has a photoelectric conversion device capable of increasing the number of saturation electrons in a defined region, and a method of fabricating the same. According to an embodiment of the present invention, a solid-state image pickup device is provided. The solid-state image pickup device includes a pixel array where a photoelectric conversion device, which has the recessed junction surface of a first conductivity type semiconductor region and a second conductivity semiconductor region, corresponds to each pixel of a pickup image and is arranged in a matrix shape with 2 dimensions. Also, the junction surface of the first conductivity type semiconductor region and the second conductivity type semiconductor region includes stripe-shaped convex part and concave part arranged in parallel to the light receiving surface of the photoelectric conversion device.</p> |
