PHOTOELECTRIC CONVERSION ELEMENT, IMAGE CAPTURE ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT FABRICATION METHOD, AND IMAGE CAPTURE ELEMENT FABRICATION METHOD

摘要

Provided are a photoelectric conversion element with which it is possible to alleviate an increase of dark current, an image capture element employing this photoelectric conversion element, a method for fabricating this photoelectric conversion element, and a method for fabricating the image capture element. A photoelectric conversion element is formed by stacking, in this order, upon a substrate: a lower part electrode; an organic layer further comprising a photoelectric conversion layer provided with a bulk hetero-structure body of a prescribed p-type organic semiconductor and an n-type organic semiconductor formed from fullerenes; and an upper part electrode. The degree of crystallization of the fullerenes is 1-5%. When fabricating the photoelectric conversion element, a process is carried out which improves PL intensity to 10% or more before x-rays are projected upon the photoelectric conversion layer.