Methods of fabricating diodes with multiple junctions

摘要

An embodiment of a method of fabricating a diode having a plurality of regions of a first conductivity type and a buried region of a second conductivity type includes performing a first dopant implantation procedure to form the buried region, performing a second dopant implantation procedure to form an intermediate region of the plurality of regions, and performing a third dopant implantation procedure to form a contact region of the plurality of regions. The second and third dopant implantation procedures are configured such that the intermediate region is electrically connected with the contact region. The first, second, and third dopant implantation procedures are configured such that the buried region extends laterally across the contact region and the intermediate region to establish first and second junctions of the diode, respectively, and such that the first junction has a lower breakdown voltage than the second junction.

主权项

1. A method of fabricating a diode comprising a plurality of regions of a first conductivity type in a semiconductor substrate, the method comprising:
forming a buried region of a second conductivity type in the semiconductor substrate; performing a first dopant implantation procedure to form an intermediate region of the plurality of regions; and performing a second dopant implantation procedure in addition to the first dopant implantation procedure to form a contact region of the plurality of regions; wherein the first and second dopant implantation procedures are configured such that the intermediate region is electrically connected with the contact region; wherein the first and second dopant implantation procedures are configured such that the buried region extends laterally across the contact region and the intermediate region to establish first and second junctions of the diode, respectively, and such that the first junction has a lower breakdown voltage than the second junction.