发明名称 Composition for formation of antireflection film and pattern formation method using the same
摘要 <p>The present invention provides a composition for forming a top anti-reflection coating having such a low refractive index that it can be suitably used in pattern formation with an ArF excimer laser beam, and further the invention also provides a pattern formation method employing that composition. The top anti-reflection coating composition comprises a particular naphthalene compound, a polymer, and a solvent. The composition is used for forming a top anti-reflection coating provided on a photoresist layer. From the photoresist layer, a pattern can be formed by use of light in 160 to 260 nm.</p>
申请公布号 KR101478986(B1) 申请公布日期 2015.01.05
申请号 KR20097015641 申请日期 2007.12.21
申请人 发明人
分类号 G03F7/11;H01L21/027 主分类号 G03F7/11
代理机构 代理人
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