| 摘要 |
PROBLEM TO BE SOLVED: To uniform the Ge distribution in the whole light absorption layer, in a light absorption body that includes a light absorption layer comprising a compound semiconductor containing Sn and Ge and a photoelectric conversion element including the light absorption body.SOLUTION: A light absorption body includes a Na-free substrate and a light absorption layer formed on the Na-free substrate and comprising a compound semiconductor containing at least Sn, Ge and Na. The light absorption layer is preferably obtained by: preparing a precursor containing at least Sn and Na, on the Na-free substrate; and subjecting the precursor to heat treatment in an atmosphere containing Ge vapor. A photoelectric conversion element includes the light absorption body. |
