| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress bad influences to a semiconductor element under a bonding pad.SOLUTION: A wiring layer 13 is patterned and formed on a first insulating layer 12 formed on a semiconductor substrate 11. A second insulating layer 14 is formed so as to cover the wiring layer 13. An insulating resin layer 15 is formed on a front surface so as to cover the second insulating layer 14. On the second insulating layer 14 and the resin layer 15 formed on the wiring layer 13, a separation groove 16 penetrating through the second insulating layer 14 and the resin layer 15 is formed. A bonding wire 20 is connected with an electrode layer 17, in a region surrounded by the separation groove 16 in a plan view, that is, on an independent resin layer 151.</p> |
