发明名称 CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 <p>Provided is a cleaning method capable of removing a reaction product deposited on an electrostatic chuck and including titanium (Ti). The cleaning method for removing a deposit containing titanium and attached to the electrostatic chuck in a substrate processing apparatus including at least an electrostatic chuck to receive a substrate and performing a plasma process on the substrate includes: a first process of reducing the deposit containing titanium by plasma of process gas containing a reducing gas; a second process of removing the reduced deposit containing titanium by the first process by plasma of process gas containing a fluorine-based gas; and a third process of removing a fluorocarbon-based deposit deposited on the electrostatic chuck through the second process by plasma of process gas containing oxygen.</p>
申请公布号 KR20150000834(A) 申请公布日期 2015.01.05
申请号 KR20140076274 申请日期 2014.06.23
申请人 TOKYO ELECTRON LIMITED 发明人 HARADA AKITOSHI
分类号 H01L21/302;H01L21/3065;H01L21/683 主分类号 H01L21/302
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