| 摘要 |
<p>#CMT# #/CMT# The method involves depositing an electrode on an intermediate layer (I), where the intermediate layer is made of a material comprising chalcogenide containing metal ions i.e. silver ions. UV radiation of the intermediate layer is irradiated (II). A metal layer is deposited (III) on the ionizable intermediate layer obtained during the irradiation process. Metal ions are disseminated (IV) from the ionizable metal layer. Another electrode is deposited (V) on a layer of chalcogenide material containing metal ions to form a microelectronic device. #CMT# : #/CMT# An independent claim is also included for a microelectronic device. #CMT#USE : #/CMT# Method for manufacturing a microelectronic device. #CMT#ADVANTAGE : #/CMT# The method enables depositing the metal layer on the ionizable intermediate layer obtained during the irradiation process, disseminating the metal ions from the ionizable metal layer, and depositing another electrode on the layer of chalcogenide material containing metal ions, thus avoiding the disturbance during the creation of an electric conductive bridge, increasing the retention time of the bridge and optimizing the realization of the microelectronic device with a programmable cell such as conductive bridging RAM (CBRAM) and programmable metallization cell (PMC), and with compact structure in an efficient manner. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a flow diagram illustrating a method for manufacturing a microelectronic device. '(Drawing includes non-English language text)' I : Step for depositing an electrode on an intermediate layer II : Step for irradiating UV radiation of an intermediate layer III : Step for depositing a metal layer on an ionizable intermediate layer IV : Step for disseminating metal ions V : Step for depositing another electrode on a layer of chalcogenide material containing metal ions.</p> |
