SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND LIGHT RECEIVER

摘要

An APD in which a first undoped semiconductor region and a second undoped semiconductor region having different semiconductor materials and arranged on an insulating film configure a photo-absorption layer and a multiplying layer, respectively, is employed, whereby crystalline of an interface between the photo-absorption layer and the multiplying layer becomes favorable, and a dark current caused by crystal defects can be decreased. Accordingly, light-receiving sensitivity of an avalanche photodiode can be improved. Further, doping concentration of the light-receiving layer and the multiplying layer can be made small. Therefore, a junction capacitance of the diode can be decreased, and a high-speed operation becomes possible.

主权项

1. A semiconductor photodetector comprising:
an insulating film formed on a substrate; a first undoped semiconductor region and a second undoped semiconductor region provided on the insulating film; an n-type electrode electrically connected to the first undoped semiconductor region; and a p-type electrode electrically connected to the second undoped semiconductor region, wherein the first undoped semiconductor region and the first undoped semiconductor region are configured from different semiconductor materials, and are arranged in a substrate in-plane direction.