发明名称 CIRCUITS FOR SEMICONDUCTOR DEVICE LEAKAGE CANCELLATION
摘要 One feature pertains to a circuit comprising a semiconductor leakage source device and a semiconductor leakage cancellation device that are both coupled to a signal line. The leakage source device generates a leakage current on the signal line, and the leakage cancellation device generates a leakage cancellation current on the signal line. The leakage cancellation device is sized and shaped in relation to the leakage source device such that the leakage cancellation current effectively cancels the leakage current on the signal line. Moreover, the leakage cancellation current cancels the leakage current on the signal line despite variations in at least one of process, temperature, and/or signal line voltages. In one example, the signal line is a virtual ground node of a capacitive feedback amplifier and the leakage source device is a switch between the virtual ground node and a first terminal of a feedback capacitor of the amplifier.
申请公布号 US2015002209(A1) 申请公布日期 2015.01.01
申请号 US201313930792 申请日期 2013.06.28
申请人 QUALCOMM INCORPORATED 发明人 Sivakumar Ramkumar
分类号 H03K17/687 主分类号 H03K17/687
代理机构 代理人
主权项 1. A circuit comprising: a semiconductor leakage source device that generates a leakage current on a signal line coupled to the leakage source device; and a semiconductor leakage cancellation device coupled to the signal line, the leakage cancellation device sized in relation to the leakage source device to generate a leakage cancellation current that effectively cancels the leakage current on the signal line.
地址 San Diego CA US