发明名称 Chemical Vapour Deposition of PTSI from Organometallic Complexes of PT
摘要 The present invention relates to the use, as a precursor for the chemical vapour deposition of PtSi at the surface of a support, of at least one organometallic complex of Pt comprising at least:—a ligand having a cyclic structure that comprises at least two non-adjacent C═C double bonds, or two ligands having a cyclic structure that each comprise a C═C double bond; and—a ligand chosen from *O—Si(R)3 and *N—(Si(R)3)2, with: the R units being chosen, independently of one another, from (C1-C4)alkoxy groups; the R′ units being chosen, independently of one another, from (C1-C4)alkyl and (C3-C4)cycloalkyl groups; and * representing the coordination of the ligand to the platinum.
申请公布号 US2015004529(A1) 申请公布日期 2015.01.01
申请号 US201314372908 申请日期 2013.01.16
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ;UNIVERSITE CLAUDE BERNARD LYON I 发明人 Donet Sebastien;Coperet Christophe;Guillet Nicolas;Laurent Pierre;Thieuleux Chloe
分类号 H01M4/90;H01M4/88;H01M8/10 主分类号 H01M4/90
代理机构 代理人
主权项
地址 Paris FR