发明名称 Light-Emitting Element, Lighting Device, Light-Emitting Device, and Electronic Device
摘要 A light-emitting element with high emission efficiency is provided. A light-emitting element with a long lifetime is provided. The light-emitting element includes an anode; a hole-transport layer over the anode, containing a hole-transport compound and a compound; a light-emitting layer over the hole-transport layer, containing a host material and a guest material; and a cathode over the light-emitting layer. The host material is an electron-transport compound. The guest material and the compound are each independently a phosphorescent compound or a thermally activated delayed fluorescence material. A peak of an emission spectrum of the compound is on a shorter wavelength side than a peak of an emission spectrum of the guest material. Only the guest material emits light.
申请公布号 US2015001502(A1) 申请公布日期 2015.01.01
申请号 US201414313356 申请日期 2014.06.24
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Seo Hiromi;Takahashi Tatsuyoshi
分类号 H01L51/50;H01L51/52 主分类号 H01L51/50
代理机构 代理人
主权项 1. A light-emitting element comprising: an anode; a hole-transport layer over the anode, the hole-transport layer containing a hole-transport compound and a first compound; a light-emitting layer over the hole-transport layer, the light-emitting layer containing a host material and a guest material; and a cathode over the light-emitting layer, wherein the first compound is any one of a phosphorescent compound and a thermally activated delayed fluorescence material, wherein the host material is an electron-transport compound, wherein the guest material is any one of a phosphorescent compound and a thermally activated delayed fluorescence material, wherein a peak of an emission spectrum of the first compound is on a shorter wavelength side than a peak of an emission spectrum of the guest material, and wherein only the guest material emits light.
地址 Kanagawa-ken JP