| 摘要 |
A semiconductor device includes: a first silicon carbide semiconductor layer; a p-type first impurity region provided in the first silicon carbide semiconductor layer; and a first ohmic electrode forming ohmic contact with the p-type first impurity region. The first ohmic electrode is a silicon alloy containing nitrogen, an average concentration of nitrogen in the first ohmic electrode is higher than or equal to one half of an average concentration of nitrogen in the first impurity region, and an average concentration of a p-type impurity in a portion of the first ohmic electrode except a portion of the first ohmic electrode within 50 nm from an interface between the first ohmic electrode and the first impurity region is equal to or lower than 3.0×1018 cm−3. |
