ACTIVE MATRIX SUBSTRATE AND MANUFACTURING METHOD OF THE SAME

摘要

To reduce the number of photolithography processes in manufacturing an active matrix substrate. Provided is a TFT substrate which has a pixel electrode connected to a drain electrode of a TFT, a source line connected to a source electrode of the TFT, and a gate line connected to a gate electrode of the TFT. A source electrode, a drain electrode, and a source line include a conductive film of the same layer as the pixel electrode. Under the source line and the pixel electrode, there remains a semiconductor layer of the same layer as a semiconductor film which constitutes a channel part of the TFT substrate.

主权项

1. An active matrix substrate comprising a thin film transistor,
said thin film transistor including:
a semiconductor film formed on a substrate;a source electrode and a drain electrode formed on said semiconductor film;a channel part which is a part of said semiconductor film and is exposed between said source electrode and said drain electrode;an insulation film covering said source electrode, said drain electrode, and said channel part; anda gate electrode disposed above said channel part with an insulation film interposed therebetween, said active matrix substrate further comprising: a pixel electrode connected to said drain electrode of said thin film transistor; a source line connected to said source electrode of said thin film transistor; and a gate line connected to said gate electrode of said thin film transistor, wherein said source electrode, said drain electrode, and said source line include a conductive film of the same layer as said pixel electrode, and wherein a semiconductor layer of the same layer as said semiconductor film remains under said source line and said pixel electrode.