发明名称 APPARATUS FOR LOW POWER WRITE AND READ OPERATIONS FOR RESISTIVE MEMORY
摘要 Described are apparatuses for improving resistive memory energy efficiency. An apparatus performs data-driven write to make use of asymmetric write switch energy between write0 and write1 operations. The apparatus comprises: a resistive memory cell coupled to a bit line and a select line; a first pass-gate coupled to the bit line; a second pass-gate coupled to the select line; and a multiplexer operable by input data, the multiplexer to provide a control signal to the first and second pass-gates or to write drivers according to logic level of the input data. An apparatus comprises circuit for performing read before write operation which avoids unnecessary writes with an initial low power read operation. An apparatus comprises circuit to perform self-controlled write operation which stops the write operation as soon as bit-cell flips. An apparatus comprises circuit for performing self-controlled read operation which stops read operation as soon as data is detected.
申请公布号 WO2014209392(A1) 申请公布日期 2014.12.31
申请号 WO2013US48753 申请日期 2013.06.28
申请人 WEI, LIQIONG;HAMZAOGLU, FATIH;WANG, YIH;AUGUST, NATHANIEL J.;LIN, BLAKE C.;DRAY, CYRILLE;INTEL CORPORATION 发明人 WEI, LIQIONG;HAMZAOGLU, FATIH;WANG, YIH;AUGUST, NATHANIEL J.;LIN, BLAKE C.;DRAY, CYRILLE
分类号 G11C11/16;G06F13/00;H01L29/82 主分类号 G11C11/16
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