发明名称 SEMICONDUCTOR DEVICE PRODUCTION METHOD AND RINSE
摘要 <p>The present invention provides a semiconductor device production method and a rinse used in the production method. The method includes: a sealing composition application process in which a semiconductor sealing layer is formed by applying, to at least a portion of a surface of a semiconductor substrate, a semiconductor sealing composition that includes a resin having a cationic functional group and a weight average molecular weight of from 2,000 to 600,000, wherein a content of sodium and a content of potassium are 10 mass ppb or less on an elemental basis, respectively; and, subsequently, a rinsing process in which the surface of the semiconductor substrate on which the semiconductor sealing layer has been formed is rinsed with a rinse having a pH at 25°C of 6 or lower.</p>
申请公布号 EP2615635(A4) 申请公布日期 2014.12.31
申请号 EP20110823646 申请日期 2011.09.08
申请人 MITSUI CHEMICALS, INC. 发明人 ONO, SHOKO;KOHMURA, KAZUO;TANAKA, HIROFUMI
分类号 H01L21/312;C09K3/10;H01L21/02;H01L21/304;H01L21/308;H01L21/3105;H01L21/768;H01L23/522 主分类号 H01L21/312
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