发明名称 LATERALLY DRIVEN PROBES FOR SEMICONDUCTOR TESTING
摘要 A method for testing a semiconductor device. The method comprises moving a probe in a vertical direction towards an electrical structure on a semiconductor device to position the probe alongside the electrical structure. A tip of the probe is positioned lower than an elevation of an outermost periphery of the electrical structure. The method also includes moving the probe in a lateral direction towards the electrical structure to contact the electrical structure. The probe tip mechanically and electrically engages the electrical structure.
申请公布号 KR20140148387(A) 申请公布日期 2014.12.31
申请号 KR20147026485 申请日期 2013.03.22
申请人 ADVANTEST CORPORATION 发明人 NAMBURI LAKSHMIKANTH;CROS FLORENT;DESTA YOHANNES
分类号 H01L21/66;G01R1/067;G01R31/26 主分类号 H01L21/66
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