发明名称 SYSTEM COMPRISING A SEMICONDUCTOR DEVICE AND STRUCTURE
摘要 SYSTEM COMPRISING A SEMICONDUCTOR DEVICE AND STRUCTURE A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern. Fig. 3A
申请公布号 SG10201406527R(A) 申请公布日期 2014.12.30
申请号 SG10201406527R 申请日期 2010.10.08
申请人 MONOLITHIC 3D INC.;OR-BACH ZVI 发明人 OR-BACH, ZVI;CRONQUIST, BRIAN;BEINGLASS, ISRAEL;DE JONG, J., L.;SEKAR, DEEPAK, C.;WURMAN, ZEEV
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