发明名称 Switch-driving circuit and DAC using the same
摘要 A switch-driving circuit and a Digital-to-Analog Converter (DAC) using the switch-driving circuit are provided. The switch-driving circuit includes a main cell and a reference cell. The main cell includes a current source and a resistance-control component electronically connected to the current source. The reference cell is coupled to the current source and the resistance-control component, and includes a first loop, the first loop is configured to track a target reference voltage so as to provide at least one first control voltage to control a resistance change of the resistance-control component. The reference cell and the main cell are implemented by MOS transistors in place of capacitors which occupy an increased circuit area, rendering reduced circuit area for the switch-driving circuit, and decreasing manufacturing costs. Further, the switch-driving circuit outputs a voltage signal with reduced noise, increasing the performance of the Digital-to-Analog Converter.
申请公布号 US8922409(B2) 申请公布日期 2014.12.30
申请号 US201313836216 申请日期 2013.03.15
申请人 MediaTek Singapore Pte. Ltd. 发明人 Tao Cheng;Feng Yue;Lan Kun;Chou Yu-Kai
分类号 H03M1/00;H03K3/356;H03M1/66;H03K3/01 主分类号 H03M1/00
代理机构 McClure, Qualey & Rodack, LLP 代理人 McClure, Qualey & Rodack, LLP
主权项 1. A switch-driving circuit, coupled between a first reference voltage and a second reference voltage, comprising: a main cell, comprising a current source and a resistance-control component electronically connected to the current source; and a reference cell, coupled to the current source and the resistance-control component, comprising a first loop configured to track a target reference voltage so as to provide at least one first control voltage to control a resistance change of the resistance-control component, wherein the first loop comprises: an operational amplifier with a first input node for receiving the target reference voltage, a second input node, and an output node; an eleventh MOS transistor, comprising a first node, a second node, and a third node, wherein the first node is coupled to the second input node of the operational amplifier, and the third node is coupled to the second reference voltage; a twelfth MOS transistor, comprising a first node, a second node, and a third node, wherein the first node is coupled to the second node of the eleventh MOS transistor, and the third node is coupled to the second reference voltage; a thirteenth MOS transistor, comprising a first node, a second node, and a third node, wherein the first node and the second node are both coupled to the second node of the twelfth MOS transistor, and the third node is coupled to the second reference voltage; and a fourteenth MOS transistor, comprising a first node coupled to the first reference voltage, a second node coupled to the output node of the operational amplifier, and a third node coupled to the first and second nodes of the thirteenth MOS transistor.
地址 Singapore SG