Planar multiferroic/magnetostrictive nanostructures as memory elements, two-stage logic gates and four-state logic elements for information processing

摘要

A magnetostrictive-piezoelectric multiferroic single- or multi-domain nanomagnet whose magnetization can be rotated through application of an electric field across the piezoelectric layer has a structure that can include either a shape-anisotropic mangnetostrictive nanomagnet with no magnetocrystalline anisotropy or a circular nanomagnet with biaxial magnetocrystalline anisotropy with dimensions of nominal diameter and thickness. This structure can be used to write and store binary bits encoded in the magnetization orientation, thereby functioning as a memory element, or perform both Boolean and non-Boolean computation, or be integrated with existing magnetic tunneling junction (MTJ) technology to perform a read operation by adding a barrier layer for the MTJ having a high coercivity to serve as the hard magnetic layer of the MTJ, and electrical contact layers of a soft material with small Young's modulus. Equivalently, mangnetostrictive nanomagnetic elements whose magnetization is rotated by strain transferred from the substrate that has acoustic waves propagating on the substrate can be used.

主权项

1. A magnetostrictive-piezoelectric multiferroic nanomagnet for implementing low energy two state Boolean logic and information processing or multistate Boolean and non-Boolean logic and information processing comprising:
a silicon base layer on which is formed a first electrical contact; a magnetostrictive layer and a piezoelectric layer formed over the silicon base layer and arranged such that magnetization of the magnetostrictive-piezoelectric multiferroic nanomagnet can be rotated through an of an electric field across the piezoelectric layer; a barrier layer followed by a hard magnet layer deposited over the magnetostrictive layer; and a second electrical contact, wherein the first and second electrical contacts apply the electric field across the piezoelectric layer through the magnetostrictive layer and generate a stress or a strain in the piezoelectric layer that is transferred to the magnetostrictive layer, wherein only the stress or the strain rotates magnetization of the magnetostrictive layer without applying a spin polarized current through the magnetostrictive-piezoelectric multiferroic nanomagnet, wherein the hard magnet layer comprises a magnetically hard layer separated from a synthetic anti-ferromagnet (SAF) layer by a suitable spacer layer to minimize dipole coupling between the layers, and wherein a read operation of the nanomagnet is facilitated using magnetic tunneling junction (MTJ) technology.