| 发明名称 | Vertical memory cell string with dielectric in a portion of the body | ||
| 摘要 | Some embodiments include a memory cell string having a body having a channel extending therein and in contact with a source/drain, a select gate adjacent to the body, a plurality of access lines adjacent to the body, and a dielectric in a portion of the body between the source/drain and a level corresponding to an end of the plurality of access lines most adjacent to the select gate. The dielectric in the portion of the body does not extend along an entire length of the body. Other embodiments are described and claimed. | ||
| 申请公布号 | US8921891(B2) | 申请公布日期 | 2014.12.30 |
| 申请号 | US201213592086 | 申请日期 | 2012.08.22 |
| 申请人 | Micron Technology, Inc. | 发明人 | Liu Haitao;Goda Akira;Mouli Chandra;Parat Krishna K. |
| 分类号 | H01L21/336 | 主分类号 | H01L21/336 |
| 代理机构 | Schwegman Lundberg & Woessner, P.A. | 代理人 | Schwegman Lundberg & Woessner, P.A. |
| 主权项 | 1. A memory cell string, comprising: a body having a channel extending therein and in contact with a source/drain; a select gate adjacent to the body; a plurality of access lines adjacent to the body; and a dielectric in a portion of the body between the source/drain and a level corresponding to an end of the plurality of access lines most adjacent to the select gate, wherein the dielectric in the portion of the body does not extend along an entire length of the body. | ||
| 地址 | Boise ID US | ||