Semiconductor device

摘要

Disclosed is a semiconductor device suppressed in decrease of reliability. The semiconductor device comprises an electrode pad portion (2) formed on the upper surface of a semiconductor substrate (1), a passivation layer (3) so formed on the upper surface of the semiconductor substrate (1) as to overlap a part of the electrode pad portion (2) and having a first opening portion (3a) where the upper surface of the electrode pad portion (2) is exposed, a barrier metal layer (5) formed on the electrode pad portion (2), and a solder bump (6) formed on the barrier metal layer (5). The barrier metal layer (5) is formed such that an outer peripheral end (5b) lies within the first opening portion (3a) of the passivation layer (3) when viewed in plan.

主权项

1. A semiconductor chip comprising:
an electrode pad portion formed on a face of a substrate; a first protection layer including a first opening through which a top face of the electrode pad portion is exposed, the first protection layer disposed on the face of the substrate and overlapping part of the electrode pad portion; a barrier metal layer formed on the electrode pad portion; a bump electrode on the barrier metal layer; and a second protection layer covering a region on the first protection layer and a region on the electrode pad portion, wherein the first protection layer has a step part formed therein as a result of the first protection layer overlapping the part of the electrode pad portion, wherein the barrier metal layer has a circumferential end part thereof formed outward of the step part as seen in a plan view, wherein the bump electrode is bonded to the barrier metal layer, wherein the barrier metal layer is on the electrode pad portion with a peripheral part of the barrier metal layer located over the second protection layer, wherein the second protection layer has a second opening through which the top face of the electrode pad portion is exposed and that has an opening width smaller than the first opening, and wherein a rim part of the second protection layer defining the second opening has an inclined shape, an upper surface of the second protection layer has a curved surface along a lower surface of the barrier metal layer, and a center point of a curvature of the curved surface as seen in a sectional view is located on a first protection layer side of the curved surface.