NITRIDE-BASED TRANSISTOR WITH VERTICAL CHANNEL AND METHOD OF FABRICATING THE SAME

摘要

A nitride based transistor according to an embodiment of the present invention includes a first nitride based first semiconductor layer doped in a first type; a first nitride based second semiconductor layer doped in a second type and disposed on the first semiconductor layer; a first nitride based third semiconductor layer doped in the first type and disposed on the second semiconductor layer; a second nitride based fourth semiconductor layer disposed along an inside wall of a trench formed to pass through at least the second and third semiconductor layers and disposed on the third semiconductor layer outside the trench; and a gage electrode formed on the fourth semiconductor layer. The second nitride based fourth semiconductor layer includes nitride having an energy band gap different from those of the first to third semiconductor layers based on first nitride.