| 摘要 |
<p>A non-volatile memory device includes a sense amplifier for comparing a conduction current of a selected one of a plurality of memory cells with a reference current. The sense amplifier includes an amplification stage having a first input terminal for receiving a first comparison voltage, a second input terminal for receiving a reference value, and an output terminal for providing a second comparison voltage. A buffer stage has an output terminal for providing a comparison current according to a difference between the conduction current and the reference current, and an input terminal for stabilizing the first comparison voltage at the reference value and the second comparison voltage at a comparison value unbalanced with respect to the reference value according to the comparison current. A latching stage indicates a logic level stored in the memory cell according to a difference between the comparison value and the reference value.</p> |
