Embedded Memory and Methods of Forming the Same

摘要

An embedded flash memory device includes a gate stack, and source and drain regions in the semiconductor substrate. The first source and drain regions are on opposite sides of the gate stack. The gate stack includes a bottom dielectric layer over the semiconductor substrate, a charge trapping layer over the bottom dielectric layer, a top dielectric layer over the charge trapping layer, a high-k dielectric layer over the top dielectric layer, and a metal gate over the high-k dielectric layer.

主权项

1. A device comprising:
a semiconductor substrate; and an embedded flash memory device comprising:
a first gate stack comprising:
a bottom dielectric layer over the semiconductor substrate;a charge trapping layer over the bottom dielectric layer;a top dielectric layer over the charge trapping layer;a first high-k dielectric layer over the top dielectric layer; anda first metal gate over the first high-k dielectric layer; andfirst source and drain regions in the semiconductor substrate, wherein the first source and drain regions are on opposite sides of the first gate stack.