SCHOTTKY BARRIER DIODE AND PROCESS OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a Schottky barrier diode having a significantly reduced leak current, having an improved breakdown voltage, excellent in breakdown characteristics.SOLUTION: The Schottky barrier diode includes: an epitaxial growth layer having a mesa part formed on a substrate; and a Schottky electrode formed on the mesa part. A distance between an end part of the Schottky electrode and an upper surface end part of the mesa part is 2 μm or less. A distance x is 2 μm or less.