SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region having a second conductivity type, a first insulating layer on the first and second semiconductor regions, and field plate electrodes are provided in the first insulating layer at different distances from the first semiconductor layer. A first field plate electrode is at a first distance, a second field plate electrode is at a second distance greater than the first distance, and a third field plate electrode is at a distance greater than the second distance. The first through third field plate electrodes are electrically connected to each other and the third electrode is electrically connected to the second semiconductor region.

主权项

1. A semiconductor device, comprising:
a first semiconductor region having a first conductivity type; a second semiconductor region having a second conductivity type, the second semiconductor region disposed on a first portion of a surface of the first semiconductor region; a first insulating layer on the first and second semiconductor regions; a first field plate electrode having a first portion at a first distance from the surface of the first semiconductor region in a first direction orthogonal to the surface; a second field plate electrode having at least a portion at a second distance greater than the first distance, from the surface of the first semiconductor region in the first direction; and a third field plate electrode having at least a portion at a third distance greater than the second distance, from the surface of the first semiconductor region in the first direction, wherein the third field plate electrode is electrically connected to the second semiconductor region, the first field plate electrode, and the second field plate electrode.