发明名称 SOLDERING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 Provided is a soldering method through nickel plating layer to reduce void occurrence rate and a method of manufacturing semiconductor device by using the soldering method. By heating a copper base plate having a nickel plating layer at a temperature range of 300° C. to 400° C. in an inert gas atmosphere beforehand, void occurrence rate can be reduced in soldering the copper base plate to an insulating circuit board.
申请公布号 US2014374470(A1) 申请公布日期 2014.12.25
申请号 US201414301425 申请日期 2014.06.11
申请人 FUJI ELECTRIC CO., LTD. 发明人 ISO Akira
分类号 B23K35/38;H01L23/00 主分类号 B23K35/38
代理机构 代理人
主权项 1. A soldering method comprising: heating a member having a nickel plating layer in a temperature range of 300° C. to 400° C. in an inert gas atmosphere, and reducing a nickel oxide film on a surface of the nickel plating layer; and joining the member to a joined member with solder in a reducing gas atmosphere.
地址 Kawasaki-shi JP