| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which improves breakdown resistance at a part near an edge termination at the time of a recovery operation of a diode without causing drop and rise of a forward voltage flowing in the diode.SOLUTION: A semiconductor device comprises: a semiconductor substrate having a diode active region and an edge termination region which are adjacent to each other; a first conductivity type first region and a second conductivity type second region in the diode active region; and a first conductivity type third region and a second conductivity type fourth region in the edge termination region. The first region and the third region share a first conductivity type drift region, and the first region has first conductivity type fifth regions having a concentration of a first conductivity impurity higher than that of the drift region. In the edge termination region, the drift region is formed on a second principal surface, and in the diode active region, the fifth regions are formed on the second principal surface. |
