| 主权项 |
1. A semiconductor device comprising:
a first conductive layer; a first insulating layer over the first conductive layer; an oxide semiconductor layer over the first insulating layer; a second conductive layer electrically connected to the oxide semiconductor layer; a third conductive layer electrically connected to the oxide semiconductor layer; a fourth conductive layer over the first insulating layer; a second insulating layer over the oxide semiconductor layer, the second conductive layer, the third conductive layer, and the fourth conductive layer; and a fifth conductive layer over the second insulating layer, wherein the first insulating layer includes a first opening, wherein the second insulating layer includes a second opening and a third opening, wherein the fifth conductive layer is electrically connected to the first conductive layer via the first opening and the second opening, wherein the fifth conductive layer is electrically connected to the e fourth conductive layer via the third opening, wherein the fourth conductive layer includes a first region capable of functioning as one of a source electrode and a drain electrode of a first transistor, wherein the oxide semiconductor layer includes a second region overlapping with the first conductive layer, and wherein the fifth conductive layer overlaps with the second region. |
