| 摘要 |
Metrology targets, design files, and design and production methods thereof are provided. The metrology targets are hybrid in that they comprise at least one imaging target structure configured to be measurable by imaging and at least one scatterometry target structure configured to be measurable by scatterometry. Thus, the hybrid targets may be measured by imaging and scatterometry simultaneously or alternatingly and/or the measurement techniques may be optimized with respect to wafer regions and other spatial parameters, as well as with respect to temporal process parameters. The hybrid targets may be used to monitor process parameters, for example via comparative overlay measurements and/or high resolution measurements. |
